CAS OpenIR  > 中科院上海应用物理研究所2011-2020年
Generating Defect-Rich Bismuth for Enhancing the Rate of Nitrogen Electroreduction to Ammonia
Wang, Y; Shi, MM; Bao, D; Meng, FL; Zhang, Q; Zhou, YT; Liu, KH; Zhang, Y; Wang, JZ; Chen, ZW; Liu, DP; Jiang, Z; Luo, M; Gu, L; Zhang, QH; Cao, XZ; Yao, Y; Shao, MH; Zhang, Y; Zhang, XB; Chen, JGG; Yan, JM; Jiang, Q
2019
Source PublicationANGEWANDTE CHEMIE-INTERNATIONAL EDITION
ISSN1433-7851
Volume58Issue:28Pages:9464-9469
Subtype期刊论文
AbstractThe electrochemical N-2 fixation, which is far from practical application in aqueous solution under ambient conditions, is extremely challenging and requires a rational design of electrocatalytic centers. We observed that bismuth (Bi) might be a promising candidate for this task because of its weak binding with H adatoms, which increases the selectivity and production rate. Furthermore, we successfully synthesized defect-rich Bi nanoplates as an efficient noble-metal-free N-2 reduction electrocatalyst via a low-temperature plasma bombardment approach. When exclusively using (HNMR)-H-1 measurements with N-2 gas as a quantitative testing method, the defect-rich Bi(110) nanoplates achieved a (NH3)-N-15 production rate of 5.453 mu gmg(Bi)(-1)h(-1) and a Faradaic efficiency of 11.68% at -0.6V vs. RHE in aqueous solution at ambient conditions.
KeywordREDUCTION CATALYSTS FIXATION
DOI10.1002/anie.201903969
Indexed BySCI
Language英语
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/32070
Collection中科院上海应用物理研究所2011-2020年
Affiliation1.Jilin Univ, Minist Educ, Key Lab Automobile Mat, Changchun 130012, Jilin, Peoples R China;
2.Jilin Univ, Dept Mat Sci & Engn, Changchun 130012, Jilin, Peoples R China;
3.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Rare Earth Resource Utilizat, Changchun 130022, Jilin, Peoples R China;
4.Beihang Univ, Sch Chem, Minist Educ, Key Lab Bioinspired Smart Interfacial Sci & Techn, Beijing 100191, Peoples R China;
5.Columbia Univ, Dept Chem Engn, New York, NY 10027 USA;
6.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 20000, Peoples R China;
7.Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China;
8.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China;
9.Hong Kong Univ Sci & Technol, Dept Chem & Biol Engn, Hong Kong 999077, Peoples R China
Recommended Citation
GB/T 7714
Wang, Y,Shi, MM,Bao, D,et al. Generating Defect-Rich Bismuth for Enhancing the Rate of Nitrogen Electroreduction to Ammonia[J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION,2019,58(28):9464-9469.
APA Wang, Y.,Shi, MM.,Bao, D.,Meng, FL.,Zhang, Q.,...&Jiang, Q.(2019).Generating Defect-Rich Bismuth for Enhancing the Rate of Nitrogen Electroreduction to Ammonia.ANGEWANDTE CHEMIE-INTERNATIONAL EDITION,58(28),9464-9469.
MLA Wang, Y,et al."Generating Defect-Rich Bismuth for Enhancing the Rate of Nitrogen Electroreduction to Ammonia".ANGEWANDTE CHEMIE-INTERNATIONAL EDITION 58.28(2019):9464-9469.
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