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Quasiepitaxy Strategy for Efficient Full-Inorganic Sb2S3 Solar Cells
Deng, H; Zeng, YY; Ishaq, M; Yuan, SJ; Zhang, H; Yang, XK; Hou, MM; Farooq, U; Huang, JL; Sun, KW; Webster, R; Wu, H; Chen, ZH; Yi, F; Song, HS; Hao, XJ; Tang, J
2019
Source PublicationADVANCED FUNCTIONAL MATERIALS
ISSN1616-301X
Volume29Issue:31Pages:-
Subtype期刊论文
AbstractAntimony sulfide (Sb2S3) as a wide-bandgap, nontoxic, and stable photovoltaic material reveals great potential for the uppermost cells in Si-based tandem cell stacks. Sb2S3 solar cells with a compatible process, acceptable cost, and high efficiency therefore become the mandatory prerequisites to match silicon bottom cells. The performance of vacuum processed Sb2S3 device is pinned by bulk and interfacial recombination. Herein, a thermally treated TiO2 buffer layer induces quasiepitaxial growth of vertical orientation Sb2S3 absorber overcoming interface defects and absorber transport loss. Such novel growth could pronouncedly improve the open-circuit voltage (V-oc) due to the superior interface quality and intraribbon transport. The epitaxial rough Sb2S3 surface shows a texturized-like morphology. It is optimized by tuning the grain sizes to form strong light trapping effect, which further enhances the short-circuit current density (J(sc)) with a 16% improvement. The final optimal device with high stability obtains a power conversion efficiency of 5.4%, which is the best efficiency for full-inorganic Sb2S3 solar cells. The present developed quasiepitaxy strategy supports a superior interface, vertical orientation, and surface light trapping effect, which provides a new perspective for efficient noncubic material thin film solar cells.
KeywordOPTICAL-PROPERTIES LAYER TIO2
DOI10.1002/adfm.201901720
Indexed BySCI
Language英语
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/32176
Collection中科院上海应用物理研究所2011-2020年
Affiliation1.HUST, WNLO, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China;
2.HUST, Sch Opt & Elect Informat, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China;
3.Huazhong Univ Sci & Technol, Shenzhen R&D Ctr, Shenzhen 518000, Peoples R China;
4.Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia;
5.HUST, SOEI, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China;
6.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai, Peoples R China
Recommended Citation
GB/T 7714
Deng, H,Zeng, YY,Ishaq, M,et al. Quasiepitaxy Strategy for Efficient Full-Inorganic Sb2S3 Solar Cells[J]. ADVANCED FUNCTIONAL MATERIALS,2019,29(31):-.
APA Deng, H.,Zeng, YY.,Ishaq, M.,Yuan, SJ.,Zhang, H.,...&Tang, J.(2019).Quasiepitaxy Strategy for Efficient Full-Inorganic Sb2S3 Solar Cells.ADVANCED FUNCTIONAL MATERIALS,29(31),-.
MLA Deng, H,et al."Quasiepitaxy Strategy for Efficient Full-Inorganic Sb2S3 Solar Cells".ADVANCED FUNCTIONAL MATERIALS 29.31(2019):-.
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