CAS OpenIR  > 中科院上海应用物理研究所2011-2020年
Epitaxial growth of < 010 >-oriented MoO2 nanorods on m-sapphire
Liu, JX; Shi, J; Wu, D; Zheng, XM; Chen, FM; Xiao, JT; Li, YZ; Song, F; Gao, YL; Huang, H
2020
Source PublicationCURRENT APPLIED PHYSICS
ISSN1567-1739
Volume20Issue:10Pages:1130-1135
Subtype期刊论文
AbstractMolybdenum dioxide (MoO2) materials have attracted considerable interests due to their superduper properties and potential applications, relating to the growth directions and exposed surfaces. Here, we reported as the substrate changes from c-to m-sapphire, the growth direction of epitaxial MoO2 nanorods via an atmospheric pressure chemical vapor deposition approach changes along from <001> to <010> of bulk monoclinic MoO2 accompanied by exposing different surfaces. Optical microscopy (OM), Raman spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), cross-sectional scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) measurements reveal these MoO2 nanorods are epitaxially grown on m-sapphire substrates with the orientation of MoO2 (101)//sapphire (10 (1) over bar0) and MoO2 <010> in line with sapphire <0001>. The electrical conductivity significantly depends on the crystallographic direction of MoO2 nanorods. The method to control the growth directions of 1D MoO2 nanorods has potential applications in nanoelectronic devices.
KeywordFIELD-EMISSION PROPERTIES ELECTRONIC-STRUCTURE BISMUTH DRIVEN
DOI10.1016/j.cap.2020.07.015
Indexed BySCI ; EI
Language英语
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/32861
Collection中科院上海应用物理研究所2011-2020年
Affiliation1.Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, 932 South Lushan Rd, Changsha 410083, Hunan, Peoples R China
2.Cent South Univ, Powder Met Res Inst, Changsha 410083, Peoples R China
3.Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China
4.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, 239 Zhangheng Rd, Shanghai 201204, Peoples R China
5.Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
Recommended Citation
GB/T 7714
Liu, JX,Shi, J,Wu, D,et al. Epitaxial growth of < 010 >-oriented MoO2 nanorods on m-sapphire[J]. CURRENT APPLIED PHYSICS,2020,20(10):1130-1135.
APA Liu, JX.,Shi, J.,Wu, D.,Zheng, XM.,Chen, FM.,...&Huang, H.(2020).Epitaxial growth of < 010 >-oriented MoO2 nanorods on m-sapphire.CURRENT APPLIED PHYSICS,20(10),1130-1135.
MLA Liu, JX,et al."Epitaxial growth of < 010 >-oriented MoO2 nanorods on m-sapphire".CURRENT APPLIED PHYSICS 20.10(2020):1130-1135.
Files in This Item: Download All
File Name/Size DocType Version Access License
Epitaxial growth of (4744KB)期刊论文出版稿开放获取CC BY-NC-SAView Download
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Liu, JX]'s Articles
[Shi, J]'s Articles
[Wu, D]'s Articles
Baidu academic
Similar articles in Baidu academic
[Liu, JX]'s Articles
[Shi, J]'s Articles
[Wu, D]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Liu, JX]'s Articles
[Shi, J]'s Articles
[Wu, D]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: Epitaxial growth of 010 -oriented MoO2 nanorods on m-sapphire.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.