CAS OpenIR  > 中科院上海应用物理研究所2011-2020年
Interfaces between MoOx and MoX2 (X = S, Se, and Te)
Chen, FM; Liu, JX; Zheng, XM; Liu, LH; Xie, HP; Song, F; Gao, YL; Huang, H
2020
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
Volume29Issue:11Pages:-
Subtype期刊论文
AbstractIn the past decades there have been many breakthroughs in low-dimensional materials, especially in two-dimensional (2D) atomically thin crystals like graphene. As structural analogues of graphene but with a sizeable band gap, monolayers of atomically thin transition metal dichalcogenides (with formula of MX2, M = Mo, W; X = S, Se, Te, etc.) have emerged as the ideal 2D prototypes for exploring fundamentals in physics such as valleytronics due to the quantum confinement effects, and for engineering a wide range of nanoelectronic, optoelectronic, and photocatalytic applications. Transition metal trioxides as promising materials with low evaporation temperature, high work function, and inertness to air have been widely used in the fabrication and modification of MX2. In this review, we reported the fabrications of one-dimensional MoS2 wrapped MoO2 single crystals with varied crystal direction via atmospheric pressure chemical vapor deposition method and of 2D MoOx covered MoX2 by means of exposing MoX2 to ultraviolet ozone. The prototype devices show good performances. The approaches are common to other transition metal dichalcogenides and transition metal oxides.
KeywordFIELD-EFFECT TRANSISTORS CHEMICAL-VAPOR-DEPOSITION EPITAXIAL-GROWTH MONOLAYER MOS2 TRANSPORT-PROPERTIES ELECTRONIC-STRUCTURES GRAPHENE NANORIBBONS LARGE-AREA NANORODS CARBON
DOI10.1088/1674-1056/abb310
Indexed BySCI ; EI
Language英语
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/32948
Collection中科院上海应用物理研究所2011-2020年
Affiliation1.Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China
3.Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
Recommended Citation
GB/T 7714
Chen, FM,Liu, JX,Zheng, XM,et al. Interfaces between MoOx and MoX2 (X = S, Se, and Te)[J]. CHINESE PHYSICS B,2020,29(11):-.
APA Chen, FM.,Liu, JX.,Zheng, XM.,Liu, LH.,Xie, HP.,...&Huang, H.(2020).Interfaces between MoOx and MoX2 (X = S, Se, and Te).CHINESE PHYSICS B,29(11),-.
MLA Chen, FM,et al."Interfaces between MoOx and MoX2 (X = S, Se, and Te)".CHINESE PHYSICS B 29.11(2020):-.
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