CAS OpenIR  > 中科院上海应用物理研究所2004-2010年
Controlled Evolution of Silicon Nanocone Arrays Induced by Ar(+) Sputtering at Room Temperature
Li, QT(李勤涛); Li, ZG; Xie, QL; Gong, JL(巩金龙); Zhu, DZ(朱德彰); Li, QT (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
2009
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume26Issue:5Pages:4
AbstractControlled evolution of silicon nanocone arrays induced by Ar(+) sputtering at room temperature, using the coating carbon as a mask, is demonstrated. The investigation of scanning electron microscopy indicates that the morphology of silicon nanostructures can be controlled by adjusting the thickness of the coating carbon film. Increasing the thickness of the coating carbon film from 50-60 nm, 250-300 nm and 750-800 nm to 1500 nm, the morphologies of silicon nanostructures are transformed from smooth surface ripple, coarse surface ripple and surface ripple with densely distributed nanocones to nanocone arrays with a high density of about 1 x 10(9) - 2 x 10(9) cm(-2).
Subject AreaPhysics
Indexed BySCI
Language英语
Funding Project应物所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/6871
Collection中科院上海应用物理研究所2004-2010年
Corresponding AuthorLi, QT (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Recommended Citation
GB/T 7714
Li, QT,Li, ZG,Xie, QL,et al. Controlled Evolution of Silicon Nanocone Arrays Induced by Ar(+) Sputtering at Room Temperature[J]. CHINESE PHYSICS LETTERS,2009,26(5):4.
APA Li, QT,Li, ZG,Xie, QL,Gong, JL,Zhu, DZ,&Li, QT .(2009).Controlled Evolution of Silicon Nanocone Arrays Induced by Ar(+) Sputtering at Room Temperature.CHINESE PHYSICS LETTERS,26(5),4.
MLA Li, QT,et al."Controlled Evolution of Silicon Nanocone Arrays Induced by Ar(+) Sputtering at Room Temperature".CHINESE PHYSICS LETTERS 26.5(2009):4.
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