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Enhanced electron field emission of carbon nanotubes by Si ion beam irradiation
Ni, ZC; Ishaq, A; Yan, L(阎隆); Gong, JL(巩金龙); Zhu, DZ(朱德彰); Yan, L (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
2009
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
Volume42Issue:7Pages:4
AbstractThe electron field emission of carbon nanotubes (CNTs) has been enhanced by Si ion beam irradiation. The defects generated by ion beam irradiation and the absorbed molecules on the CNTs were responsible for the enhancement of electron field emission. This investigation provides a possible way to improve the electron field emission properties of CNTs and understand the mechanism of electron field emission enhancement of CNTs.
Subject AreaPhysics
Indexed BySCI
Language英语
Funding Project应物所项目组
WOS IDWOS:000264385900041
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/6910
Collection中科院上海应用物理研究所2004-2010年
Corresponding AuthorYan, L (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Recommended Citation
GB/T 7714
Ni, ZC,Ishaq, A,Yan, L,et al. Enhanced electron field emission of carbon nanotubes by Si ion beam irradiation[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009,42(7):4.
APA Ni, ZC,Ishaq, A,Yan, L,Gong, JL,Zhu, DZ,&Yan, L .(2009).Enhanced electron field emission of carbon nanotubes by Si ion beam irradiation.JOURNAL OF PHYSICS D-APPLIED PHYSICS,42(7),4.
MLA Ni, ZC,et al."Enhanced electron field emission of carbon nanotubes by Si ion beam irradiation".JOURNAL OF PHYSICS D-APPLIED PHYSICS 42.7(2009):4.
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