CAS OpenIR  > 中科院上海应用物理研究所2004-2010年
Selective growth of diamond by hot filament CVD using patterned carbon film as mask
He, ZT(贺周同); Yang, SM; Li, QT(李勤涛); Zhu, DZ(朱德彰); Gong, JL(巩金龙); Gong, JL (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
2008
Source PublicationNUCLEAR SCIENCE AND TECHNIQUES
ISSN1001-8042
Volume19Issue:2Pages:83
AbstractSelected-area deposition (SAD) of diamond films was achieved on silicon substrates with carbon film mask by hot filament chemical vapor deposition. Needle tip scraped lines were used to grow diamond films. Scanning electron microscope (SEM) investigation demonstrates that highly selective and sharp edged diamond films were produced. The results also demonstrate that the proper substrate temperature is very important for diamond selective growth in this deposition process. Since the enhancement of diamond growth was not observed on the needle tip scraped area of Si wafer with diamond powder scratching, the selective growth was considered to be closely correlated to silicon carbide formed during carbon film deposition and the residual carbon in the scraped area.
Subject AreaPhysics
Indexed BySCI
Language英语
Funding Project应物所项目组
WOS IDWOS:000256955100005
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/7819
Collection中科院上海应用物理研究所2004-2010年
Corresponding AuthorGong, JL (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Recommended Citation
GB/T 7714
He, ZT,Yang, SM,Li, QT,et al. Selective growth of diamond by hot filament CVD using patterned carbon film as mask[J]. NUCLEAR SCIENCE AND TECHNIQUES,2008,19(2):83.
APA He, ZT,Yang, SM,Li, QT,Zhu, DZ,Gong, JL,&Gong, JL .(2008).Selective growth of diamond by hot filament CVD using patterned carbon film as mask.NUCLEAR SCIENCE AND TECHNIQUES,19(2),83.
MLA He, ZT,et al."Selective growth of diamond by hot filament CVD using patterned carbon film as mask".NUCLEAR SCIENCE AND TECHNIQUES 19.2(2008):83.
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