CAS OpenIR  > 中科院上海应用物理研究所2004-2010年
Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate
Chen, CC; Yu, BH; Liu, JF; Cao, JQ(曹建清); Zhu, DZ(朱德彰); Liu, ZH; Chen, CC (reprint author), XinYang Normal Univ, Coll Phys & Elect Engn, XinYang 464000, Peoples R China
2005
Source PublicationNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN0168-583X
Volume239Issue:4Pages:433
AbstractSi1-xGex thin films on the Ar+ ion-implanted Si substrates with different implantation energy (30 keV, 40 keV and 60 keV) at the same implantation fluence (3 x 10(15) cm(-2)) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Various characterization technologies were used to characterize these Si1-xGex films. Investigations by Rutherford backscattering spectroscopy/channeling (RBS/C) demonstrate that thin Si0.81Ge0.19 films could be epitaxially grown on the ion-implanted Si substrates, although there existed obvious crystal defects. These relaxation extents of Si0.81Ge0.19 films on the Ar+ implanted Si substrates are larger than that in the un-implanted case, which were determined by Raman spectra. Atomic force microscopy was used to determine the surface morphology of Si0.81Ge0.19 films. The microstructures of these SiGe/Si hetero-epitaxial materials were investigated by transmission electron microscopy (TEM). All the experimental results demonstrated that a highly relaxed (relaxation extent of 82.3%) Si0.81Ge0.19 thin film (50 nm) growing on the 30 keV Ar+ ion-implanted Si substrate is optimal, which is compared to those SiGe films grown on the ion-implanted Si substrate under other implantation condition. (c) 2005 Elsevier B.V. All rights reserved.
KeywordStrain Relaxation Uhvcvd Ion implantatIon Sige
Subject AreaChemistry
Indexed Bysci
Language英语
Funding Project应物所项目组
WOS IDWOS:000232800000017
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/8084
Collection中科院上海应用物理研究所2004-2010年
Corresponding AuthorChen, CC (reprint author), XinYang Normal Univ, Coll Phys & Elect Engn, XinYang 464000, Peoples R China
Recommended Citation
GB/T 7714
Chen, CC,Yu, BH,Liu, JF,et al. Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2005,239(4):433.
APA Chen, CC.,Yu, BH.,Liu, JF.,Cao, JQ.,Zhu, DZ.,...&Chen, CC .(2005).Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,239(4),433.
MLA Chen, CC,et al."Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 239.4(2005):433.
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