Knowledge Management System Of Shanghai Institute of Applied Physics, CAS
| Nanocrystalline diamond from carbon nanotubes | |
| Sun, LT; Gong, JL（巩金龙）; Zhu, ZY（朱志远）; Zhu, DZ（朱德彰）; He, SX; Wang, ZX; Chen, Y; Hu, G; Gong, JL (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China | |
| 2004 | |
| Source Publication | APPLIED PHYSICS LETTERS
 |
| ISSN | 0003-6951 |
| Volume | 84Issue:15Pages:2901 |
| Abstract | Structural phase transformation from multiwalled carbon nanotubes to nanocrystalline diamond by hydrogen plasma post-treatment was carried out. Ultrahigh equivalent diamond nucleation density above 10(11) nuclei/cm(2) was easily obtained. The diamond formation and growth mechanism was proposed to be the consequence of the formation of sp(3) bonded amorphous carbon clusters. The hydrogen chemisorption on curved graphite network and the energy deposited on the carbon nanotubes by continuous impingement of activated molecular or atomic hydrogen are responsible for the formation of amorphous carbon matrix. Diamond nucleates and grows in the way similar to that of diamond chemical vapor deposition processes on amorphous carbon films. (C) 2004 American Institute of Physics. |
| Subject Area | Physics |
| Indexed By | sci |
| Language | 英语 |
| Funding Project | 应物所项目组 |
| WOS ID | WOS:000220728100061 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.sinap.ac.cn/handle/331007/8116 |
| Collection | 中科院上海应用物理研究所2004-2010年 |
| Corresponding Author | Gong, JL (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China |
| Recommended Citation GB/T 7714 | Sun, LT,Gong, JL,Zhu, ZY,et al. Nanocrystalline diamond from carbon nanotubes[J]. APPLIED PHYSICS LETTERS,2004,84(15):2901. |
| APA | Sun, LT.,Gong, JL.,Zhu, ZY.,Zhu, DZ.,He, SX.,...&Gong, JL .(2004).Nanocrystalline diamond from carbon nanotubes.APPLIED PHYSICS LETTERS,84(15),2901. |
| MLA | Sun, LT,et al."Nanocrystalline diamond from carbon nanotubes".APPLIED PHYSICS LETTERS 84.15(2004):2901. |
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