Knowledge Management System Of Shanghai Institute of Applied Physics, CAS
| Analysis of the ramping process of the SSRF booster | |
| Li, HH（李浩虎）; Liu, GM（刘桂民）; Li, HH (reprint author), CAS, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China | |
| 2006 | |
| Source Publication | HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
 |
| ISSN | 0254-3052 |
| Volume | 30Pages:66 |
| Abstract | The booster of the Shanghai Synchrotron Radiation Facility (SSRF) is designed to accelerate the electron beam from 100 MeV to 3.5 GeV in 250 ms, with a repetition frequency of 2 Hz. Its circumference is 180 m with a periodicity of 28 FODO cell. Energy ramping in the booster synchrotron is the one of the important processes that will affect the beam parameters, the time structure and the injection efficiency of the storage ring. In this paper, the ramping process of the SSRF booster is described in detail, such as ramping curves of magnets and RF voltage, eddy current effect and chromaticity correction, phase space evolution during acceleration, etc. |
| Keyword | Ssrf Booster Ramping Process |
| Subject Area | Physics |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | 应物所项目组 |
| WOS ID | WOS:000235951000021 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.sinap.ac.cn/handle/331007/8248 |
| Collection | 中科院上海应用物理研究所2004-2010年 |
| Corresponding Author | Li, HH (reprint author), CAS, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China |
| Recommended Citation GB/T 7714 | Li, HH,Liu, GM,Li, HH . Analysis of the ramping process of the SSRF booster[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2006,30:66. |
| APA | Li, HH,Liu, GM,&Li, HH .(2006).Analysis of the ramping process of the SSRF booster.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,30,66. |
| MLA | Li, HH,et al."Analysis of the ramping process of the SSRF booster".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 30(2006):66. |
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