CAS OpenIR  > 中科院上海应用物理研究所2004-2010年
Analysis of the ramping process of the SSRF booster
Li, HH(李浩虎); Liu, GM(刘桂民); Li, HH (reprint author), CAS, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
2006
Source PublicationHIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
ISSN0254-3052
Volume30Pages:66
AbstractThe booster of the Shanghai Synchrotron Radiation Facility (SSRF) is designed to accelerate the electron beam from 100 MeV to 3.5 GeV in 250 ms, with a repetition frequency of 2 Hz. Its circumference is 180 m with a periodicity of 28 FODO cell. Energy ramping in the booster synchrotron is the one of the important processes that will affect the beam parameters, the time structure and the injection efficiency of the storage ring. In this paper, the ramping process of the SSRF booster is described in detail, such as ramping curves of magnets and RF voltage, eddy current effect and chromaticity correction, phase space evolution during acceleration, etc.
KeywordSsrf Booster Ramping Process
Subject AreaPhysics
Indexed BySCI
Language英语
Funding Project应物所项目组
WOS IDWOS:000235951000021
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/8248
Collection中科院上海应用物理研究所2004-2010年
Corresponding AuthorLi, HH (reprint author), CAS, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Recommended Citation
GB/T 7714
Li, HH,Liu, GM,Li, HH . Analysis of the ramping process of the SSRF booster[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2006,30:66.
APA Li, HH,Liu, GM,&Li, HH .(2006).Analysis of the ramping process of the SSRF booster.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,30,66.
MLA Li, HH,et al."Analysis of the ramping process of the SSRF booster".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 30(2006):66.
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