CAS OpenIR  > 中科院上海应用物理研究所2004-2010年
Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate
Chen, CC(陈长春); Liu, ZH; Huang, WT; Dou, WZ; Xiong, XY; Zhang, W(张伟); Peihsin, T; Cao, JQ(曹建清); Chen, CC (reprint author), Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China, Peoples R China
2004
Source PublicationJOURNAL OF RARE EARTHS
ISSN1002-0721
Volume22Pages:26
AbstractThin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar+ ion implantation Si substrates for different dose (1 x 10(14), 5 x 10(14), 3 x 10(15) cm(-2)) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system. Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Si0.8Ge0.2 films could indeed epitaxially grow on the Ar+ ion implantation Si substrates. Under low dose (1 x 10(14) cm(-2)) and medium dose (5 x 10(14) cm(-2)) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 x 10(15) cm(-2)) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6%). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 x 10(14) cm(-2)) implantation Si substrate.
KeywordStrain Relaxation Uhvcvd Ion implantatIon Sige
Subject AreaPhysics
Indexed BySCI
Language英语
Funding Project应物所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/8274
Collection中科院上海应用物理研究所2004-2010年
Corresponding AuthorChen, CC (reprint author), Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China, Peoples R China
Recommended Citation
GB/T 7714
Chen, CC,Liu, ZH,Huang, WT,et al. Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate[J]. JOURNAL OF RARE EARTHS,2004,22:26.
APA Chen, CC.,Liu, ZH.,Huang, WT.,Dou, WZ.,Xiong, XY.,...&Chen, CC .(2004).Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate.JOURNAL OF RARE EARTHS,22,26.
MLA Chen, CC,et al."Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate".JOURNAL OF RARE EARTHS 22(2004):26.
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