Knowledge Management System Of Shanghai Institute of Applied Physics, CAS
| Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate | |
| Chen, CC（陈长春）; Liu, ZH; Huang, WT; Dou, WZ; Xiong, XY; Zhang, W（张伟）; Peihsin, T; Cao, JQ（曹建清）; Chen, CC (reprint author), Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China, Peoples R China | |
| 2004 | |
| Source Publication | JOURNAL OF RARE EARTHS
 |
| ISSN | 1002-0721 |
| Volume | 22Pages:26 |
| Abstract | Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar+ ion implantation Si substrates for different dose (1 x 10(14), 5 x 10(14), 3 x 10(15) cm(-2)) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system. Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Si0.8Ge0.2 films could indeed epitaxially grow on the Ar+ ion implantation Si substrates. Under low dose (1 x 10(14) cm(-2)) and medium dose (5 x 10(14) cm(-2)) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 x 10(15) cm(-2)) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6%). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 x 10(14) cm(-2)) implantation Si substrate. |
| Keyword | Strain Relaxation Uhvcvd Ion implantatIon Sige |
| Subject Area | Physics |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | 应物所项目组 |
| Document Type | 期刊论文 |
| Identifier | http://ir.sinap.ac.cn/handle/331007/8274 |
| Collection | 中科院上海应用物理研究所2004-2010年 |
| Corresponding Author | Chen, CC (reprint author), Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China, Peoples R China |
| Recommended Citation GB/T 7714 | Chen, CC,Liu, ZH,Huang, WT,et al. Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate[J]. JOURNAL OF RARE EARTHS,2004,22:26. |
| APA | Chen, CC.,Liu, ZH.,Huang, WT.,Dou, WZ.,Xiong, XY.,...&Chen, CC .(2004).Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate.JOURNAL OF RARE EARTHS,22,26. |
| MLA | Chen, CC,et al."Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate".JOURNAL OF RARE EARTHS 22(2004):26. |
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