CAS OpenIR  > 中科院上海应用物理研究所2004-2010年
Etching effects of low energy argon ion beam on porous anodic aluminum oxide membranes
Sen, W(王森); Yu, GJ(俞国军); Gong, JL; Li, QT; Zhu, DZ; Zhu, ZY; Sen, W (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
2006
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume55Issue:3Pages:1517
AbstractPorous anodic aluminum oxide (AAO) membranes were sputtered by 500eV argon ion (Ar+) beam. Scanning electron microscopy and atomic force microscopy images show that not only the barrier layer of AAO can be easily removed by Ar+ beam sputtering, but also several categories of surface morphologies were got by changing the incidence parameters. For instance, off-normal incidence bombardment results in ripple formation on the surface of AAO and off-normal incidence during smple stage rotation leads to AAO surface smoothing. Theory of ripple formation and evolution on amorphous substrate under ion beam irradiation developed by Bradley and Harper is used to interpret the characteristics of ripples on AAO surface.
KeywordPorous Anodic Aluminum Oxide Membrane Ion Beam Etching
Subject AreaInstruments & Instrumentation ; Physics
Indexed BySCI
Language英语
Funding Project应物所项目组
WOS IDWOS:000235919300088
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/8279
Collection中科院上海应用物理研究所2004-2010年
Corresponding AuthorSen, W (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Recommended Citation
GB/T 7714
Sen, W,Yu, GJ,Gong, JL,et al. Etching effects of low energy argon ion beam on porous anodic aluminum oxide membranes[J]. ACTA PHYSICA SINICA,2006,55(3):1517.
APA Sen, W.,Yu, GJ.,Gong, JL.,Li, QT.,Zhu, DZ.,...&Sen, W .(2006).Etching effects of low energy argon ion beam on porous anodic aluminum oxide membranes.ACTA PHYSICA SINICA,55(3),1517.
MLA Sen, W,et al."Etching effects of low energy argon ion beam on porous anodic aluminum oxide membranes".ACTA PHYSICA SINICA 55.3(2006):1517.
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