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2MeV He~+离子注入修复太赫兹发射源
杨康; 马明旺; 陈西良; 朱智勇
2009
Source Publication核技术
Issue1
Abstract为修复因加载过高外置偏压而被击穿的太赫兹光电导天线的发射晶体,采用离子注入法对光电导间隙区域进行了2MeVHe+离子注入处理。经过1016ions/cm2He+离子处理后,光电导天线的电阻由约800?变为60M?,基本恢复到了击穿前的水平。通过对比辐照前后太赫兹发射源在空气气氛中的时域谱和频域谱,发现离子辐照后太赫兹信号强度有了十分明显的增强,时域光谱峰值信号电流由辐照前的2nA增加到了辐照后的8nA,峰值功率增幅超过了一个量级,且发现处理后光电导天线的频谱相对于辐照前有了明显的展宽。
Keyword离子辐照 太赫兹光谱 光电导天线
Indexed ByCNKI
Language中文
Funding Project应物所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/8470
Collection中科院上海应用物理研究所2004-2010年
Corresponding Author杨康
Recommended Citation
GB/T 7714
杨康,马明旺,陈西良,等. 2MeV He~+离子注入修复太赫兹发射源[J]. 核技术,2009(1).
APA 杨康,马明旺,陈西良,&朱智勇.(2009).2MeV He~+离子注入修复太赫兹发射源.核技术(1).
MLA 杨康,et al."2MeV He~+离子注入修复太赫兹发射源".核技术 .1(2009).
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