CAS OpenIR  > 中科院上海应用物理研究所2004-2010年
β-Ga_2O_3:Cr单晶体的浮区法生长及光学特性
张俊刚; 李斌; 夏长泰; 徐军; 邓群; 徐晓东; 吴锋; 徐悟生; 史宏生; 裴广庆; 吴永庆
2007-03-30
Source Publication中国科学(E辑:技术科学)
Issue03
Abstract利用浮区法生长得到β-Ga2O3:Cr单晶体.在室温下测试了β-Ga2O3:Cr单晶体的吸收光谱和发射光谱.通过吸收光谱计算了晶体场分裂系数Dq和Racah系数,得到10Dq/B=23.14,表明Cr3+在β-Ga2O3晶体中处于较弱的晶体场.β-Ga2O3:Cr单晶体经高温退火后Cr3+的发射明显加强,而绿光的发射减弱.采用420nm波长激发,在691nm可得到强而宽的特征发射,此发射对应于Cr3+的4T2→4A2跃迁.
Indexed ByCNKI
Language中文
Funding Project应物所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/8726
Collection中科院上海应用物理研究所2004-2010年
Corresponding Author张俊刚
Recommended Citation
GB/T 7714
张俊刚,李斌,夏长泰,等. β-Ga_2O_3:Cr单晶体的浮区法生长及光学特性[J]. 中国科学(E辑:技术科学),2007(03).
APA 张俊刚.,李斌.,夏长泰.,徐军.,邓群.,...&吴永庆.(2007).β-Ga_2O_3:Cr单晶体的浮区法生长及光学特性.中国科学(E辑:技术科学)(03).
MLA 张俊刚,et al."β-Ga_2O_3:Cr单晶体的浮区法生长及光学特性".中国科学(E辑:技术科学) .03(2007).
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