Knowledge Management System Of Shanghai Institute of Applied Physics, CAS
| Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate | |
| Chen, CC（陈长春）; Liu, ZH; Huang, WT; Dou, WZ; Xiong, XY; Zhang, W（张伟）; Peihsin, T; Cao, JQ（曹建清） | |
| 2004 | |
| Conference Name | 8th China-Korea Workshop on Advanced Materials |
| Source Publication | JOURNAL OF RARE EARTHS |
| Pages | 26 |
| Conference Date | AUG 02-03, 2004 |
| Conference Place | Chengdu, PEOPLES R CHINA |
| Abstract | Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar+ ion implantation Si substrates for different dose (1 x 10(14), 5 x 10(14), 3 x 10(15) cm(-2)) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system. Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Si0.8Ge0.2 films could indeed epitaxially grow on the Ar+ ion implantation Si substrates. Under low dose (1 x 10(14) cm(-2)) and medium dose (5 x 10(14) cm(-2)) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 x 10(15) cm(-2)) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6%). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 x 10(14) cm(-2)) implantation Si substrate. |
| ISSN | 1002-0721 |
| Indexed By | SCI |
| Funding Project | 应物所课题组 |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.sinap.ac.cn/handle/331007/8834 |
| Collection | 中科院上海应用物理研究所2004-2010年 |
| Recommended Citation GB/T 7714 | Chen, CC,Liu, ZH,Huang, WT,et al. Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate[C],2004:26. |
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