CAS OpenIR  > 中科院上海应用物理研究所2004-2010年
Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate
Chen, CC(陈长春); Liu, ZH; Huang, WT; Dou, WZ; Xiong, XY; Zhang, W(张伟); Peihsin, T; Cao, JQ(曹建清)
2004
Conference Name8th China-Korea Workshop on Advanced Materials
Source PublicationJOURNAL OF RARE EARTHS
Pages26
Conference DateAUG 02-03, 2004
Conference PlaceChengdu, PEOPLES R CHINA
AbstractThin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar+ ion implantation Si substrates for different dose (1 x 10(14), 5 x 10(14), 3 x 10(15) cm(-2)) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system. Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Si0.8Ge0.2 films could indeed epitaxially grow on the Ar+ ion implantation Si substrates. Under low dose (1 x 10(14) cm(-2)) and medium dose (5 x 10(14) cm(-2)) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 x 10(15) cm(-2)) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6%). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 x 10(14) cm(-2)) implantation Si substrate.
ISSN1002-0721
Indexed BySCI
Funding Project应物所课题组
Language英语
Document Type会议论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/8834
Collection中科院上海应用物理研究所2004-2010年
Recommended Citation
GB/T 7714
Chen, CC,Liu, ZH,Huang, WT,et al. Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate[C],2004:26.
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