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13.4nm软X射线干涉光刻透射光栅的优化设计
朱伟忠; 吴衍青; 陈敏; 王纳秀; 邰仁忠; 徐洪杰
2008-07-15
Source Publication光学学报
Issue07
Abstract基于严格的矢量耦合波方法,结合纳米级光栅实际制作工艺,定量分析了在13.4 nm软X射线(TE偏振)正入射条件下,光栅材料、厚度、占空比、梯形浮雕底角大小等因素对光栅一级衍射效率的影响。结果表明,在此波段处,Si3N4、Cr、Au浮雕的相位作用对光栅衍射起重要影响,其中非金属材料Si3N4比金属材料Cr、Au的相位作用更明显。最后优化得到了用Si(或Si3N4)做衬底的Si3N4、Cr、Au光栅,分析结果显示,其一级衍射效率优于目前用于13.4 nm软X射线干涉光刻的Cr、Si3N4复合光栅。
Keyword干涉光刻 软x射线透射光栅 严格耦合波方法 复折射率 衍射效率
Indexed ByCNKI
Language中文
Funding Project应物所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/9024
Collection中科院上海应用物理研究所2004-2010年
Corresponding Author朱伟忠
Recommended Citation
GB/T 7714
朱伟忠,吴衍青,陈敏,等. 13.4nm软X射线干涉光刻透射光栅的优化设计[J]. 光学学报,2008(07).
APA 朱伟忠,吴衍青,陈敏,王纳秀,邰仁忠,&徐洪杰.(2008).13.4nm软X射线干涉光刻透射光栅的优化设计.光学学报(07).
MLA 朱伟忠,et al."13.4nm软X射线干涉光刻透射光栅的优化设计".光学学报 .07(2008).
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