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低能Ar离子束辅助沉积Ag(111)薄膜
江炳尧,蒋军,冯涛,任琮欣,张正选,柳襄怀,郑里平; 江炳尧
2005-01-10
Source Publication核技术
Issue01
Abstract采用低能Ar离子束辅助沉积方法,在Mo/Si(100)基底上制备Ag膜。实验发现,用Ar离子束溅射沉积的Ag膜呈(111)择优取向。若在溅射沉积Ag膜的同时,用能量为500eV的Ar离子束沿衬底法线方向对Ag膜进行辅助轰击,当离子/原子到达比为0.06时,Ag膜呈(111)择优取向;当离子/原子到达比增大到0.18时,Ag膜呈(111)和(100)混合晶向。若Ar离子的入射角为35.26°,离子/原子到达比为0.06时,Ag膜呈(111)择优取向;当离子/原子比增大到0.18时,Ag膜呈(111)和微弱的(100)混合晶向。若Ar离子的入射角为54.7°,离子/原子到达比为0.06时,沉积的Ag膜呈很强的(111)择优取向。
Keyword离子束辅助沉积 Ag膜 沟道效应 择优取向
Indexed ByCNKI
Funding Project应物所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/9281
Collection中科院上海应用物理研究所2004-2010年
Corresponding Author江炳尧
Recommended Citation
GB/T 7714		 江炳尧,蒋军,冯涛,任琮欣,张正选,柳襄怀,郑里平,江炳尧. 低能Ar离子束辅助沉积Ag(111)薄膜[J]. 核技术,2005(01).
APA 江炳尧,蒋军,冯涛,任琮欣,张正选,柳襄怀,郑里平,&江炳尧.(2005).低能Ar离子束辅助沉积Ag(111)薄膜.核技术(01).
MLA 江炳尧,蒋军,冯涛,任琮欣,张正选,柳襄怀,郑里平,et al."低能Ar离子束辅助沉积Ag(111)薄膜".核技术 .01(2005).
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