CAS OpenIR  > 中科院上海应用物理研究所2011-2019年
Electronic structure of In2O3 nanowires synthesized at low temperature
Yuan Gang; Gao Jing; Sun Xuhui; Zhou Xingtai(周兴泰)
2011
Source PublicationNUCLEAR SCIENCE AND TECHNIQUES
ISSN1001-8042
Volume22Issue:5Pages:272
AbstractIn2O3 nanowires with uniform morphology and single crystalline structure were synthesized at low temperature of 400 degrees C similar to 450 degrees C using InSb as the precursor via VLS mechanism. The nanowires have uniform diameter of about 40 nm and are up to tens of micrometres in length and grew along the [100] direction as established by high resolution electron microscopy. The electronic and local structures of In2O3 nanowires, compared to that of In2O3 powder, have been studied with X-ray absorption fine structure (XAFS) at In K-edge and O K-edge. The XAFS results reveal the stronger In-O bonding in In2O3 nanowires compared to bulk In2O3.
Indexed BySCI
Language英语
Funding Project应物所项目组
WOS IDWOS:000300762900004
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/9504
Collection中科院上海应用物理研究所2011-2019年
Recommended Citation
GB/T 7714
Yuan Gang,Gao Jing,Sun Xuhui,et al. Electronic structure of In2O3 nanowires synthesized at low temperature[J]. NUCLEAR SCIENCE AND TECHNIQUES,2011,22(5):272.
APA Yuan Gang,Gao Jing,Sun Xuhui,&Zhou Xingtai.(2011).Electronic structure of In2O3 nanowires synthesized at low temperature.NUCLEAR SCIENCE AND TECHNIQUES,22(5),272.
MLA Yuan Gang,et al."Electronic structure of In2O3 nanowires synthesized at low temperature".NUCLEAR SCIENCE AND TECHNIQUES 22.5(2011):272.
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