Knowledge Management System Of Shanghai Institute of Applied Physics, CAS
| Structure of post-annealed ferroelectric PbZrxTi1-xO3 and SrBi2Ta2O9 thin films | |
| Gao, JX; Liu, EJ; Zhang, ZB（张志兵）; Cao, JQ（曹建清）; Zeng, AP | |
| 2003 | |
| Conference Name | International Conference on Materials for Advanced Technologies (ICMAT2001) |
| Source Publication | THIN SOLID FILMS |
| Pages | 79 |
| Conference Date | JUL 01-06, 2001 |
| Conference Place | SINGAPORE, SINGAPORE |
| Abstract | In order to fabricate good quality ferroelectric thin films, PbZrxTi(1-x)O3 (PZT) and SrBi2Ta2O9 (SBT) films were fabricated on SiO2/Si(100) substrates and on Pt/Ti/SiO2/Si(100) substrates by pulsed laser excimer deposition (PLD). X-ray diffraction, Rutherford backscattering analysis, and atomic force microscopy were used to characterize the structural properties of the samples, which were post-annealed at different temperatures. The results showed that the PZT and SBT films fabricated on Pt/Ti/SiO2/Si(100) substrates and annealed at 700 degreesC exhibited optimum properties. (C) 2002 Elsevier Science B.V. All rights reserved. |
| ISSN | 0040-6090 |
| Indexed By | SCI |
| Funding Project | 应物所课题组 |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.sinap.ac.cn/handle/331007/9831 |
| Collection | 中科院上海原子核所2003年前 |
| Recommended Citation GB/T 7714 | Gao, JX,Liu, EJ,Zhang, ZB,et al. Structure of post-annealed ferroelectric PbZrxTi1-xO3 and SrBi2Ta2O9 thin films[C],2003:79. |
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