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Combinatorial ion synthesis and ion beam analyses of materials libraries on thermally grown SiO2 | |
Chen, CM(陈昌明); Pan, HC; Zhu, DZ(朱德彰); Hu, J(胡钧); Li, MQ(李民乾) | |
2000 | |
Source Publication | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
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ISSN | 0921-5107 |
Volume | 72Issue:40942Pages:113 |
Abstract | We first report a method combining ion implantation and physical masking to generate material libraries of various ion-implanted samples. This approach offers rapid synthesis of samples with potential new compounds formed in the matrix, which may have specific luminescent properties. The depth-resolved cathodoluminescence (CL) measurements, accompanied with Rutherford backscattering spectrometry (RBS) and proton elastic scattering (PES) revealed some specific optical properties in the samples correlated with implanted ion distributions. These measurements are capable of nondestructively and rapidly characterizing the composition and the inhomogeneity of the combinatorial film libraries, which may determine their physical properties. (C) 2000 Elsevier Science S.A. All rights reserved. |
Indexed By | SCI |
Language | 英语 |
Funding Project | 应物所项目组 |
Document Type | 期刊论文 |
Identifier | http://ir.sinap.ac.cn/handle/331007/9907 |
Collection | 中科院上海原子核所2003年前 |
Recommended Citation GB/T 7714 | Chen, CM,Pan, HC,Zhu, DZ,et al. Combinatorial ion synthesis and ion beam analyses of materials libraries on thermally grown SiO2[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2000,72(40942):113. |
APA | Chen, CM,Pan, HC,Zhu, DZ,Hu, J,&Li, MQ.(2000).Combinatorial ion synthesis and ion beam analyses of materials libraries on thermally grown SiO2.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,72(40942),113. |
MLA | Chen, CM,et al."Combinatorial ion synthesis and ion beam analyses of materials libraries on thermally grown SiO2".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 72.40942(2000):113. |
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