CAS OpenIR  > 中科院上海原子核所2003年前
DIODE CHARACTERISTICS AND DEGRADATION MECHANISM OF ION-IMPLANTED POLYACETYLENE FILMS
WANG, WM; WAN, HH; RONG, TW; BAO, JR; LIN, SH
1991
Source PublicationNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN0168-583X
Volume61Issue:4Pages:466
AbstractThe diode characteristics (rectifying ratio, threshold and breakdown voltage) have been studied for a p-n junction produced by implanting K+ ions into FeCl3 doped polyacetylene (PA) films which were synthesized by the rare-earth catalyst technique and Naarmann method, respectively. A rectifying ratio of over 300 and a breakdown voltage of about 25-30 V have been achieved. Some of the modified PA films could keep their p-n junctions for more than 2000 hours at the temperature of 0-degrees-C after implantation. Different ion beam techniques were used to investigate the PA film oxidation, dopant losses and the diffusion of implanted species for the purpose of trying to have a good understanding of the degration mechanism for a polymer p-n junction.
Indexed BySCI
Language英语
Funding Project应物所项目组
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/9933
Collection中科院上海原子核所2003年前
Recommended Citation
GB/T 7714
WANG, WM,WAN, HH,RONG, TW,et al. DIODE CHARACTERISTICS AND DEGRADATION MECHANISM OF ION-IMPLANTED POLYACETYLENE FILMS[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,1991,61(4):466.
APA WANG, WM,WAN, HH,RONG, TW,BAO, JR,&LIN, SH.(1991).DIODE CHARACTERISTICS AND DEGRADATION MECHANISM OF ION-IMPLANTED POLYACETYLENE FILMS.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,61(4),466.
MLA WANG, WM,et al."DIODE CHARACTERISTICS AND DEGRADATION MECHANISM OF ION-IMPLANTED POLYACETYLENE FILMS".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 61.4(1991):466.
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