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Effect of ion implantation on surface energy of ultrahigh molecular weight polyethylene | |
Chen, JS; Sun, Z; Guo, PS; Zhang, ZB; Zhu, DZ(朱德彰); Xu, HJ(徐洪杰) | |
2003 | |
Source Publication | JOURNAL OF APPLIED PHYSICS
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ISSN | 0021-8979 |
Volume | 93Issue:9Pages:5103 |
Abstract | The effect of ion implantation including ion species (N-2(+) and C3H8+) and the fluences (1x10(14)-5x10(15) ions/cm(2)) on the surface energy of ultrahigh molecular weight polyethylene (UHMWPE) were investigated. The total surface energy increases significantly after implanting with the fluence of 1x10(14) ions/cm(2) regardless of ion species, then, the total surface energy slightly increases for N-2(+) implanted UHMWPE and decreases slightly for C3H8+ implanted UHMWPE with a further increase of fluence. The structural changes of UHMWPE with different fluence for different ion species are very similar. The linear chains of UHMWPE are damaged and cross linking is generated after implantation. As the fluence increases, the polymer surface becomes more disordered, and the surface becomes hydrogenated amorphous carbon when the fluence exceeds 1x10(15) ions/cm(2). The surface roughness increases with the increase of the fluence regardless of ion implantation species. (C) 2003 American Institute of Physics. |
Indexed By | SCI |
Language | 英语 |
Funding Project | 应物所项目组 |
WOS ID | WOS:000182296700021 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.sinap.ac.cn/handle/331007/9947 |
Collection | 中科院上海原子核所2003年前 |
Recommended Citation GB/T 7714 | Chen, JS,Sun, Z,Guo, PS,et al. Effect of ion implantation on surface energy of ultrahigh molecular weight polyethylene[J]. JOURNAL OF APPLIED PHYSICS,2003,93(9):5103. |
APA | Chen, JS,Sun, Z,Guo, PS,Zhang, ZB,Zhu, DZ,&Xu, HJ.(2003).Effect of ion implantation on surface energy of ultrahigh molecular weight polyethylene.JOURNAL OF APPLIED PHYSICS,93(9),5103. |
MLA | Chen, JS,et al."Effect of ion implantation on surface energy of ultrahigh molecular weight polyethylene".JOURNAL OF APPLIED PHYSICS 93.9(2003):5103. |
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