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中国科学院上海应用物理研究所机构知识库
Knowledge Management System Of Shanghai Institute of Applied Physics, CAS
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中科院上海应用物理研... [1]
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2020 [1]
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中文 [1]
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人工晶体学报 [1]
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C、N、F掺杂对VO_2电子结构影响的研究
期刊论文
人工晶体学报, 2020, 卷号: 49, 期号: 02, 页码: 239-245+258
Authors:
万金玉
;
刘怡飞
;
李雪娇
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Submit date:2021/04/25
第一性原理
二氧化钒
态密度