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SiGe/Si(100)外延薄膜材料的应变表征研究 期刊论文
核技术, 2005, 期号: 04
Authors:  陈长春,余本海,刘江峰,曹建清,朱德彰;  陈长春
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应变  硅锗  卢瑟福背散射/沟道效应  高分辨率x射线衍射  拉曼谱  
Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 卷号: 239, 期号: 4, 页码: 433
Authors:  Chen, CC;  Yu, BH;  Liu, JF;  Cao, JQ(曹建清);  Zhu, DZ(朱德彰);  Liu, ZH;  Chen, CC (reprint author), XinYang Normal Univ, Coll Phys & Elect Engn, XinYang 464000, Peoples R China
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Strain Relaxation  Uhvcvd  Ion implantatIon  Sige  
Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate 期刊论文
JOURNAL OF RARE EARTHS, 2004, 卷号: 22, 页码: 26
Authors:  Chen, CC(陈长春);  Liu, ZH;  Huang, WT;  Dou, WZ;  Xiong, XY;  Zhang, W(张伟);  Peihsin, T;  Cao, JQ(曹建清);  Chen, CC (reprint author), Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China, Peoples R China
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Strain Relaxation  Uhvcvd  Ion implantatIon  Sige  
Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate 会议论文
JOURNAL OF RARE EARTHS, Chengdu, PEOPLES R CHINA, AUG 02-03, 2004
Authors:  Chen, CC(陈长春);  Liu, ZH;  Huang, WT;  Dou, WZ;  Xiong, XY;  Zhang, W(张伟);  Peihsin, T;  Cao, JQ(曹建清)
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