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Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate 会议论文
JOURNAL OF RARE EARTHS, Chengdu, PEOPLES R CHINA, AUG 02-03, 2004
Authors:  Chen, CC(陈长春);  Liu, ZH;  Huang, WT;  Dou, WZ;  Xiong, XY;  Zhang, W(张伟);  Peihsin, T;  Cao, JQ(曹建清)
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