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一种钙钛矿太阳能电池的原位实时同步观测装置 专利
专利类型: 实用新型, 专利号: CN206313736U, 申请日期: 2017-07-07, 公开日期: 2017-07-07
Authors:  杨迎国;  阴广志;  冯尚蕾;  顾月良;  季庚午;  张晓楠;  程振东;  苏圳煌;  高兴宇
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一种同步辐射X射线对面探测器的快速准直方法及系统 专利
专利类型: 发明专利, 专利号: CN106770398A, 申请日期: 2017-05-31, 公开日期: 2017-05-31
Authors:  柳义;  顾月良;  高梅;  阴广志;  文闻;  高兴宇
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薄膜X射线衍射原位测试装置 专利
专利类型: 实用新型, 专利号: CN206074486U, 申请日期: 2017-04-05, 公开日期: 2017-04-05
Authors:  王瑞;  刘春泽;  朱大明;  顾月良;  阴广志;  李晓龙
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Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 页码: 575-580
Authors:  Hu, K;  Yang, YJ;  Hong, B;  Zhao, JT;  Luo, ZL;  Li, XG;  Zhang, XM;  Gu, YL;  Gao, XY;  Gao, C
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Anisotropic Metal-insulator Transition  Anisotropic Electronic Transport  Epitaxial Strain  Vanadium Dioxide Thin Film  Stripe Domain Structure  
The structural origin of enhanced piezoelectric performance and stability in lead free ceramics 期刊论文
ENERGY & ENVIRONMENTAL SCIENCE, 2017, 卷号: 10, 期号: 2, 页码: 528-537
Authors:  Zheng, T;  Wu, HJ;  Yuan, Y;  Lv, X;  Li, Q;  Men, TL;  Zhao, C;  Xiao, DQ;  Wu, JG;  Wang, K;  Li, JF;  Gu, YL;  Zhu, J;  Pennycook, SJ
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一种线形探测器的安装校准装置 专利
专利类型: 实用新型, 专利号: CN205643201U, 申请日期: 2016-10-12, 公开日期: 2016-10-12
Authors:  高梅;  文闻;  顾月良;  高兴宇
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Facile usage of a MYTHEN 1K with a Huber 5021 diffractometer and angular calibration in operando experiments 期刊论文
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2016, 卷号: 49, 页码: 1182-1189
Authors:  Gao, M;  Gu, YL;  Li, L;  Gong, ZL;  Gao, XY;  Wen, W;  Wen, W (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Pudong New Area, Shanghai 201204, Peoples R China.;  Wen, W (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Jialuo Rd 2019, Shanghai 201800, Peoples R China.
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Mythen 1k  X-ray Powder Diffraction  Synchrotron Radiation  Debye-scherrer Geometry  
Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition 期刊论文
SCIENTIFIC REPORTS, 2016, 卷号: 6, 期号: -, 页码: —
Authors:  Yang, MM;  Yang, YJ;  Hong, B;  Wang, LX;  Hu, K;  Dong, YQ;  Xu, H;  Huang, HL;  Zhao, JT;  Chen, HP;  Song, L;  Ju, HX;  Zhu, JF;  Bao, J;  Li, XG;  Gu, YL;  Yang, TY;  Gao, XY;  Luo, ZL;  Gao, C;  Gao, C (reprint author), Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China.;  Gao, C (reprint author), Univ Sci & Technol China, Collaborat Innovat Ctr Chem Energy Mat, Hefei 230026, Anhui, Peoples R China.;  Gao, C (reprint author), Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China.
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Dioxide Thin-films  Vanadium Dioxide  Mott Transition  Tio2 001  Spectroscopy  Modulation  Temperature  Devices  
一种可进行热化学气相沉积的原位测试平台 专利
专利类型: 发明专利, 专利号: CN104502367A, 申请日期: 2015-04-08, 公开日期: 2015-04-08
Authors:  朱大明;  李晓龙;  刘春泽;  顾月良;  阴广志;  高兴宇;  黎忠
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一种原位测试样品平台 专利
专利类型: 发明专利, 专利号: CN104458780A, 申请日期: 2015-03-25, 公开日期: 2015-03-25
Authors:  朱大明;  李晓龙;  刘春泽;  顾月良;  阴广志;  高兴宇;  黎忠
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