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Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate 期刊论文
JOURNAL OF RARE EARTHS, 2004, 卷号: 22, 页码: 26
Authors:  Chen, CC(陈长春);  Liu, ZH;  Huang, WT;  Dou, WZ;  Xiong, XY;  Zhang, W(张伟);  Peihsin, T;  Cao, JQ(曹建清);  Chen, CC (reprint author), Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China, Peoples R China
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Strain Relaxation  Uhvcvd  Ion implantatIon  Sige  
Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate 会议论文
JOURNAL OF RARE EARTHS, Chengdu, PEOPLES R CHINA, AUG 02-03, 2004
Authors:  Chen, CC(陈长春);  Liu, ZH;  Huang, WT;  Dou, WZ;  Xiong, XY;  Zhang, W(张伟);  Peihsin, T;  Cao, JQ(曹建清)
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