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Contact angle measurement in lattice Boltzmann method 期刊论文
COMPUTERS & MATHEMATICS WITH APPLICATIONS, 2018, 卷号: 76, 期号: 7, 页码: 1686-1698
Authors:  Wen, BH;  Huang, BF;  Qin, ZR;  Wang, CL;  Zhang, CY
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PATTERNED SURFACES  MULTIPHASE FLOWS  MODEL  EVAPORATION  SIMULATIONS  HYSTERESIS  SUBSTRATE  DENSITY  DROPS  
Transmutation of ABO(4) compounds incorporating technetium-99 and caesium-137 期刊论文
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2017, 卷号: 25, 期号: 2, 页码: -
Authors:  Kuo, EY;  Qin, MJ;  Thorogood, GJ;  Huai, P;  Ren, CL;  Lumpkin, GR;  Middleburgh, SC
Adobe PDF(823Kb)  |  Favorite  |  View/Download:150/20  |  Submit date:2017/12/08
Abo(4) Minerals  Transmutation  Technetium  Caesium  Density Functional Theory  
Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology 期刊论文
MICROELECTRONIC ENGINEERING, 2016, 卷号: 163, 页码: 49-54
Authors:  Wang, GL;  Qin, CL;  Yin, HX;  Luo, J;  Duan, NY;  Yang, P;  Gao, XY;  Yang, T;  Li, JF;  Yan, J;  Zhu, HL;  Wang, WW;  Chen, DP;  Ye, TC;  Zhao, C;  Radamson, HH;  Luo, J (reprint author), Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.
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Finfet  Sige Selective Epitaxy  Rpcvd  High-k & Metal Gate