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Evolutions of morphology and electronic properties of few-layered MoS2 exposed to UVO 期刊论文
RESULTS IN PHYSICS, 2020, 卷号: 19, 页码: -
Authors:  Liu, JX;  Sun, KL;  Zheng, XM;  Wang, ST;  Lian, SC;  Deng, CY;  Xie, HP;  Zhang, X;  Gao, YL;  Song, F;  Huang, H
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TRANSITION-METAL DICHALCOGENIDES  MONOLAYER MOS2  PHOTOLUMINESCENCE  TRANSISTORS  BULK  WSE2  
Comprehensive characterization of TSV etching performance with phase-contrast X-ray microtomography 期刊论文
JOURNAL OF SYNCHROTRON RADIATION, 2020, 卷号: 27, 页码: 1023-1032
Authors:  Li, K;  Deng, B;  Zhang, HP;  Yu, FC;  Xue, YL;  Xie, CQ;  Ye, TC;  Xiao, TQ
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SILICON VIAS  RETRIEVAL  PROFILE  
Interfaces between MoOx and MoX2 (X = S, Se, and Te) 期刊论文
CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 11, 页码: -
Authors:  Chen, FM;  Liu, JX;  Zheng, XM;  Liu, LH;  Xie, HP;  Song, F;  Gao, YL;  Huang, H
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FIELD-EFFECT TRANSISTORS  CHEMICAL-VAPOR-DEPOSITION  EPITAXIAL-GROWTH  MONOLAYER MOS2  TRANSPORT-PROPERTIES  ELECTRONIC-STRUCTURES  GRAPHENE NANORIBBONS  LARGE-AREA  NANORODS  CARBON  
PbI2-MoS2 Heterojunction: van der Waals Epitaxial Growth and Energy Band Alignment 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2019, 卷号: 10, 期号: 15, 页码: 4203-4208
Authors:  Xiao, JT;  Liu, JX;  Sun, K;  Zhao, Y;  Shao, ZY;  Liu, XL;  Yuan, YB;  Li, YZ;  Xie, HP;  Song, F;  Gao, YL;  Huang, H
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PEROVSKITE SOLAR-CELLS  TEMPERATURE-DEPENDENCE  PBI2 FLAKES  GRAPHENE  HETEROSTRUCTURE  PHOTODETECTORS  MONOLAYER  GAP  
Structural and electronic properties of atomically thin Bismuth on Au(111) 期刊论文
SURFACE SCIENCE, 2019, 卷号: 679, 期号: -, 页码: 147—153
Authors:  He, BC;  Tian, G;  Gou, J;  Liu, BX;  Shen, KC;  Tian, QW;  Yu, ZQ;  Song, F;  Xie, HP;  Gao, YL;  Lu, YH;  Wu, KH;  Chen, L;  Huang, H
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ULTRAVIOLET PHOTOEMISSION  EPITAXIAL GRAPHENE  MOLECULES  MONOLAYERS  SYSTEMS  GROWTH  
Electronic structure evolution at DBBA/Au(111) interface W/O Bismuth insertion layer 期刊论文
SYNTHETIC METALS, 2019, 卷号: 251, 期号: -, 页码: 24—29
Authors:  Tian, QW;  He, BC;  Zhao, Y;  Wang, ST;  Xiao, JT;  Song, F;  Wang, Y;  Lu, YH;  Xie, HP;  Huang, H;  Gao, YL
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INITIO MOLECULAR-DYNAMICS  BOTTOM-UP FABRICATION  GRAPHENE NANORIBBONS  
The Detector Development and Physics Program in sPHENIX Experiment at RHIC 期刊论文
NUCLEAR PHYSICS A, 2019, 卷号: 982, 期号: -, 页码: 955—958
Authors:  Kim, Y;  Angerami, A;  Alfred, M;  Atkin, E;  Akiba, Y;  Aidala, C;  Azmoun, B;  Arratia, M;  Aune, S;  Bathe, S;  Bumazhnov, V;  Berdnikov, Y;  Brooks, W;  Barish, K;  Bellwied, R;  Blau, D;  Brooks, M;  Brandin, A;  Babintsev, V;  Berdnikov, A;  Bernauer, J;  Bi, R;  Bailey, V;  Bazilevsky, A;  Belmont, R;  Chiu, M;  Chi, C;  Connors, M;  Csanad, M;  Citron, Z;  Cole, B;  Csorgo, T;  Chaturvedi, O;  Canoa-Roman, V;  Contin, G;  Chen, X;  David, G;  Denisov, A;  Durum, A;  Durham, M;  Dehmelt, K;  Drees, A;  Dumancic, M;  Danley, T;  Deshpande, A;  Osborn, JD;  Dong, X;  Dixit, D;  Esumi, S;  Enokizono, A;  El Alaoui, A;  En'yo, H;  Franz, A;  Frawley, A;  Finger, M;  Fadem, B;  Fokin, S;  Frantz, J;  Fields, D;  Feege, N;  Friscic, I;  Grau, N;  Gupta, N;  Gunji, T;  Greene, V;  Garg, P;  Perdekamp, MG;  Goto, Y;  Gao, C;  Haggerty, J;  Huang, J;  He, X;  van Hecke, H;  Hasegawa, S;  Hong, B;  Hemmick, T;  Hakobyan, H;  Huang, H;  Harris, J;  Hoffmann, G;  Hodges, A;  Hasell, D;  Hill, K;  Hachiya, T;  Ivanishchev, D;  Kim, EJ;  Jouan, D;  Skoby, MJ;  Jacak, B;  Singh, BK;  Kistenev, E;  Klein, A;  Kazantsev, A;  Khanzadeev, A;  Komkov, B;  Kotov, D;  Kurita, K;  Kincses, D;  Kuleshov, S;  Kim, C;  Koehler, M;  Kwon, Y;  Kapukchyan, D;  Kang, J;  Klein, S;  Kunnawalkam, R;  Lajoie, J;  Lebedev, A;  Li, X;  Lim, S;  Liu, K;  Liu, M;  Llope, B;  Lee, Y;  Loggins, V;  Lai, Y;  Liu, A;  Mannel, E;  Morrison, D;  McCumber, M;  McGaughey, P;  Manko, V;  Malayev, M;  Mignerey, A;  Markert, C;  Milov, A;  Murata, J;  Milner, R;  McGlinchey, D;  Majoros, T;  Mitsuka, G;  Ma, Y;  Nouicer, R;  Nyanin, A;  Nagy, M;  Novak, T;  Nagle, J;  Nattrass, C;  Nakano, K;  Nakagawa, I;  O'Brien, E;  Ogilvie, C;  Okorokov, V;  Koop, JO;  Odyniec, G;  Pinkenburg, C;  Pisani, R;  Purschke, M;  Pantuev, V;  Peresunko, D;  Pate, S;  Pinsky, L;  Pruneau, C;  Putschke, J;  Papavassiliou, V;  Perez-Lara, C;  Park, S;  Pun, A;  Paladi, H;  Phipps, M;  Da Costa, HP;  Procureur, S;  Reed, R;  Riabov, V;  Rostchin, E;  Ryabov, Y;  Radzevich, P;  Ray, L;  Rosati, M;  Ramasubramanian, N;  Redwine, R;  Roland, C;  Roland, G;  Richford, D;  Sakaguchi, T;  Steinberg, P;  Shei, I;  Sen, A;  Sato, S;  Soltz, R;  Snowball, M;  Sondheim, W;  Shimomura, M;  Samsonov, V;  da Silva, C;  Strikhanov, M;  Stankus, P;  Salur, S;  Sziklai, J;  Shibata, TA;  Seto, R;  Sickles, A;  Schambach, J;  Sarsour, M;  Sako, H;  Seidl, R;  Singh, A;  Stephans, G;  Shi, Z;  Sun, Z;  Surrow, B;  Stoll, S;  Sourikova, I;  Szornel, J;  Shi, S;  Sabatier, F;  Shulga, E;  Tannenbaum, M;  Tanida, K;  Taranenko, A;  Timmins, A;  Tarafdar, S;  Tsai, O;  Tserruya, I;  Tarnai, G;  Torales-Acosta, F;  Ujvari, B;  Vrba, V;  Voloshin, S;  Velkovska, J;  Carson, SV;  Perepelitsa, DV;  Vandenbroucke, M;  Woody, C;  Wickes, A;  Watanabe, Y;  Wang, Y;  Wang, Z;  Xu, N;  Xie, W;  Yanovich, A;  Yushmanov, I;  Yu, H;  Yamaguchi, Y;  Yokkaichi, S;  Yang, P;  Yajun, M;  You, Z;  Zajc, B;  Zharko, S
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Thickness-Dependent Air-Exposure-Induced Phase Transition of CuPc Ultrathin Films to Well-Ordered One-Dimensional Nanocrystals on Layered Substrates 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 卷号: 119, 期号: 8, 页码: 4217—4223
Authors:  Zhang, L;  Yang, YG;  Huang, H;  Lyu, L;  Zhang, H;  Cao, NT;  Xie, HP;  Gao, XY;  Niu, DM;  Gao, YL
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Phthalocyanine Thin-films  Scanning-tunneling-microscopy  Oriented Pyrolytic-graphite  Copper-phthalocyanine  Organic Semiconductors  Molecular-orientation  Epitaxial Graphene  Electronic Devices  Optical-properties  Growth  
Peptide Diffusion and Self-Assembly in Ambient Water Nanofilm on Mica Surface 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY B, 2009, 卷号: 113, 期号: 26, 页码: 5
Authors:  Li, H(李海);  Zhang, F;  Zhang, Y;  Ye, M;  Zhou, B;  Tang, YZ;  Yang, HJ;  Xie, MY;  Chen, SF;  He, JH(何建华);  Fang, HP(方海平);  Hu, J(胡钧);  Zhang, Y (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
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